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17 May 2006 Silicon MOEMS-based IR sensors for the high-volume security market
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Abstract
In a previous paper presented to this SPIE forum a new technology was described which specifically addresses the high volume IR security sensor market. In the present paper, results are presented of recent research on silicon MOEMS-based resistance microbolometer technology directed towards high volume sensor manufacture. The dissertation includes the results of measurements made with an experimental sensor aimed at confirming performance predictions, including two mosaic-pixel FPA formats designed for multi-role applications. The conclusions support development of a silicon foundry compatible FPA technology using alloys of silicon as the temperature sensitive component, simple FPA packaging, and sensors units employing plastic optics and body components.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kevin C. Liddiard "Silicon MOEMS-based IR sensors for the high-volume security market", Proc. SPIE 6206, Infrared Technology and Applications XXXII, 62061M (17 May 2006); https://doi.org/10.1117/12.665209
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