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18 May 2006 An analysis of gamma radiation effects on ZnS- and CdTe-passivated HgCdTe photodiodes
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Abstract
At present, infrared photodetectors are being increasingly used in space systems, where they are exposed to the space radiation environment. Consequently, the radiation-hardness-related problem in HgCdTe photodetectors has become a critical issue. In this study, the gamma radiation effects on ZnS- and CdTe-passivated mid-wavelength infrared (MWIR) HgCdTe photodiodes were investigated. Although ZnS has an excellent insulating property, its radiation-tolerant property was revealed very poor in comparison with CdTe. After 1 Mrad of gamma irradiation, the resistance-area product at zero bias (R0A) value of the ZnS-passivated photodiode was drastically reduced by roughly 5 orders from ~107 Ω cm2 to 102 Ω cm2, whereas the CdTe-passivated photodiode showed no degradation in R0A values.
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Min Yung Lee, Young Ho Kim, Nam Ho Lee, Yong Soo Lee, Siva Sivananthan, and Hee Chul Lee "An analysis of gamma radiation effects on ZnS- and CdTe-passivated HgCdTe photodiodes", Proc. SPIE 6206, Infrared Technology and Applications XXXII, 62062J (18 May 2006); https://doi.org/10.1117/12.665500
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