Sb-heterostructure diode detector W-band NEP and NEDT optimization

H. P. Moyer; R. L. Bowen; J. N. Schulman; D. H. Chow; S. Thomas III; T. Y. Hsu; J. J. Lynch; K. S. Holabird

doi:10.1117/12.667284

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5 May 2006 Sb-heterostructure diode detector W-band NEP and NEDT optimization

H. P. Moyer, R. L. Bowen, J. N. Schulman, D. H. Chow, S. Thomas III, T. Y. Hsu, J. J. Lynch, K. S. Holabird

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Proceedings Volume 6211, Passive Millimeter-Wave Imaging Technology IX; 62110J (2006) https://doi.org/10.1117/12.667284
Event: Defense and Security Symposium, 2006, Orlando (Kissimmee), Florida, United States

Abstract

Sb-heterostructure diodes have become the detector of choice for W-band millimeter wave imaging cameras now being commercialized or in prototype development. Here we optimize the diode impedance to yield a minimum noise equivalent power (NEP). The goal is to decrease the gain required of the front-end LNA. Measured W-band sensitivities for two diodes are 3500 and 5500V/W. Their zero bias differential resistance values imply Johnson noise limited NEP's of 0.98 and 0.83pW/Hz^1/2, respectively, much less than obtained from conventional biased Schottky diodes. A MMIC version of the diode detector has been simulated with an integrated bandwidth of ~ 30 GHz at W-band. The simulated temperature sensitivity (NEΔT) with an HRL W-band LNA on the front end is <1°K.

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H. P. Moyer, R. L. Bowen, J. N. Schulman, D. H. Chow, S. Thomas III, T. Y. Hsu, J. J. Lynch, and K. S. Holabird "Sb-heterostructure diode detector W-band NEP and NEDT optimization", Proc. SPIE 6211, Passive Millimeter-Wave Imaging Technology IX, 62110J (5 May 2006); https://doi.org/10.1117/12.667284

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