19 May 2006 High-sensitivity, quasi-optically-coupled semimetal-semiconductor detectors at 104 GHz
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Abstract
We report experimental results for the optical responsivity and noise-equivalent power (NEP) of quasi-optically coupled, room-temperature ErAs-InGaAlAs rectifier diodes. Four-micron-diameter diodes were flip-chip coupled to self-complementary log-periodic and square-spiral antennas, and characterized with a 104-GHz Gunn diode oscillator coupled to the rectifiers through variable attenuators, a feedhorn, an aspherical polymeric lens, and a Si hyperhemisphere. The log-periodic mounted device displayed a responsivity and specific NEP' of 0.9x103 V/W and 1.2x10-12 W/Hz1/2, respectively. The square-spiral mounted device displayed a responsivity and NEP' of 1.2x103 V/W and 2.0x10-12 W/Hz 1/2, respectively. All values were measured at a post-detection center frequency of 33 Hz.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. R. Brown, E. R. Brown, H. Kazemi, H. Kazemi, A. C. Young, A. C. Young, J. D. Zimmerman, J. D. Zimmerman, T. L. J. Wilkinson, T. L. J. Wilkinson, J. E. Bjarnason, J. E. Bjarnason, J. B. Hacker, J. B. Hacker, A. C. Gossard, A. C. Gossard, } "High-sensitivity, quasi-optically-coupled semimetal-semiconductor detectors at 104 GHz", Proc. SPIE 6212, Terahertz for Military and Security Applications IV, 62120S (19 May 2006); doi: 10.1117/12.666473; https://doi.org/10.1117/12.666473
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