19 May 2006 High-sensitivity, quasi-optically-coupled semimetal-semiconductor detectors at 104 GHz
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Abstract
We report experimental results for the optical responsivity and noise-equivalent power (NEP) of quasi-optically coupled, room-temperature ErAs-InGaAlAs rectifier diodes. Four-micron-diameter diodes were flip-chip coupled to self-complementary log-periodic and square-spiral antennas, and characterized with a 104-GHz Gunn diode oscillator coupled to the rectifiers through variable attenuators, a feedhorn, an aspherical polymeric lens, and a Si hyperhemisphere. The log-periodic mounted device displayed a responsivity and specific NEP' of 0.9x103 V/W and 1.2x10-12 W/Hz1/2, respectively. The square-spiral mounted device displayed a responsivity and NEP' of 1.2x103 V/W and 2.0x10-12 W/Hz 1/2, respectively. All values were measured at a post-detection center frequency of 33 Hz.
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E. R. Brown, E. R. Brown, H. Kazemi, H. Kazemi, A. C. Young, A. C. Young, J. D. Zimmerman, J. D. Zimmerman, T. L. J. Wilkinson, T. L. J. Wilkinson, J. E. Bjarnason, J. E. Bjarnason, J. B. Hacker, J. B. Hacker, A. C. Gossard, A. C. Gossard, } "High-sensitivity, quasi-optically-coupled semimetal-semiconductor detectors at 104 GHz", Proc. SPIE 6212, Terahertz for Military and Security Applications IV, 62120S (19 May 2006); doi: 10.1117/12.666473; https://doi.org/10.1117/12.666473
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