Paper
24 May 2006 Pulsed neutron interrogation for detection of concealed special nuclear materials
Frank Ruddy, John Seidel, Robert Flammang, Bojan Petrovic, Abdul Dulloo, Thomas Congedo
Author Affiliations +
Abstract
A new neutron interrogation technique for detection of concealed Special Nuclear Material (SNM) is described. This technique is a combination of timing techniques from pulsed prompt gamma neutron activation analysis with silicon carbide (SiC) semiconductor fast neutron detector technology. SiC detectors are a new class of radiation detectors that are ultra-fast and capable of processing high count rates. SiC detectors can operate during and within nanoseconds of the end of an intense neutron pulse, providing the ability to detect the prompt neutron emissions from fission events produced by the neutrons in concealed SNM on a much faster pulsing time scale than has been achieved by other techniques. Neutron-induced fission neutrons in 235U have been observed in the time intervals between pulses of 14-MeV neutrons from a deuterium-tritium electronic neutron generator. Initial measurements have emphasized the detection of SNM using thermal-neutron induced fission. Neutron pulsing and time-sequenced neutron counts were carried out on a hundreds of microseconds time scale, enabling the observation of prompt fission neutrons induced by the die-away of thermal neutrons following the 14-MeV pulse. A discussion of pulsed prompt-neutron measurements and of SiC detectors as well as initial measurement results will be presented.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Frank Ruddy, John Seidel, Robert Flammang, Bojan Petrovic, Abdul Dulloo, and Thomas Congedo "Pulsed neutron interrogation for detection of concealed special nuclear materials", Proc. SPIE 6213, Non-Intrusive Inspection Technologies, 62130D (24 May 2006); https://doi.org/10.1117/12.664467
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Cited by 8 scholarly publications.
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KEYWORDS
Silicon carbide

Sensors

Gamma radiation

Diodes

Semiconductors

Data acquisition

Ions

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