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19 May 2006 Characterization of InGaAsP/InP APD arrays for SWIR imaging applications
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Abstract
32×32 element InGaAsP/InP avalanche photodiode arrays operating at 1.06 μm have been fabricated and characterized. Material characterization data on uniformity and layer quality have been correlated to array performance using the McIntyre model. Sheet resistivity maps, Hall mobility, dark current, capacitance and gain data are presented. These devices have showed gain as high as 75 with low dark current. Both device and materials uniformity characterization data will be presented.
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Joseph Boisvert, Ping Yuan, Paul McDonald, Takahiro Isshiki, Andrey Masalykin, and Rengarajan Sudharsanan "Characterization of InGaAsP/InP APD arrays for SWIR imaging applications", Proc. SPIE 6214, Laser Radar Technology and Applications XI, 62140H (19 May 2006); https://doi.org/10.1117/12.666002
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