12 May 2006 Advances in high-brightness high-power semiconductor lasers
Author Affiliations +
Abstract
We present recent advances in high power semiconductor laser bars and arrays at wavelengths from the near infrared to the eye-safe regime including increased spectral brightness with internal gratings to narrow and stabilize the spectrum, increased spatial brightness with multimode and high power single mode performance, and reduced cost architectures from high power surface emitting 2-dimensional arrays. These devices have the potential to dramatically improve diode pumped systems and enable new direct diode applications.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. M. Lammert, R. M. Lammert, S. W. Oh, S. W. Oh, M. L. Osowski, M. L. Osowski, C. Panja, C. Panja, P. T. Rudy, P. T. Rudy, T. Stakelon, T. Stakelon, J. E. Ungar, J. E. Ungar, } "Advances in high-brightness high-power semiconductor lasers", Proc. SPIE 6216, Laser Source and System Technology for Defense and Security II, 62160B (12 May 2006); doi: 10.1117/12.666259; https://doi.org/10.1117/12.666259
PROCEEDINGS
12 PAGES


SHARE
RELATED CONTENT

High power diode lasers emitting from 639 nm to 690...
Proceedings of SPIE (March 07 2014)
DPSSL and FL pumps based on 980 nm telecom pump...
Proceedings of SPIE (June 01 2004)
Advances in high brightness semiconductor lasers
Proceedings of SPIE (February 15 2006)
High power reliable 808 nm laser bars for QCW and...
Proceedings of SPIE (February 15 2006)

Back to Top