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26 June 1986 Epitaxial Overgrowth Of Si On SiO2 Surface
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The novel approach to increase the performance of semiconductor devices is proposed. This approach is based on the concept of three-dimensional device fabrication where a single-crystalline Si layer is electrically isolated from a similar Si layer by a Si02 film. The growth of this single-crystalline Si layer is accomplished by an epitaxial growth of Si on slots of the seed region of a Si substrate bordered with a Si02 film and the overgrowth of Si on top of the Si02 surface by the CVD technique. The single-crystallinity of the epilayer has been revealed by the presence of Kikuchi lines on its surface.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. S. Yue, S. W. Oh, and S. S. Rhee "Epitaxial Overgrowth Of Si On SiO2 Surface", Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986);

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