26 June 1986 Silicon-On-Insulator Technology By Crystallization On Quartz Substrates
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The purpose of the novel zone-melting recrystallization process (ZMR) is to produce single crystalline Si films on Si02 of high crystalline perfection, which are suitable for device fabrication and subsequent industrial applications. However, silicon films grown on amorphous insulating substrates without seeding contain regularly spaced subgrain boundaries as their predominant growth defect and to a lesser degree twin boundaries and some grain boundaries. Detailed materials studies have revealed the core structure of these extended defects and the fundamental mechanisms responsible for subgrain boundary formation. The nature and origin of subgrain boundaries is reviewed and a model for polygonization of the initial dislocation arrays is presented. In addition to subgrain boundary formation, silicon films on quartz are subject to microcracking due to thermal mismatch with the substrate. The influence of these residual growth defects and the inherent tensile stress on device performance is evaluated.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Baumgart "Silicon-On-Insulator Technology By Crystallization On Quartz Substrates", Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); doi: 10.1117/12.961210; https://doi.org/10.1117/12.961210

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