Silicon-On-Insulator Technology By Heteroepitaxial Growth Of Fluorides

Robin F. C. Farrow

doi:10.1117/12.961208

26 June 1986 Silicon-On-Insulator Technology By Heteroepitaxial Growth Of Fluorides

Robin F. C. Farrow

Proceedings Volume 0623, Advanced Processing and Characterization of Semiconductors III; (1986) https://doi.org/10.1117/12.961208
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States

Abstract

Progress in the growth and fabrication of silicon-on-insulator (SOI) structures, based on heteroepitaxial growth of CaF₂ films on silicon, is reviewed. This approach has led to prototype SOI structures, such as MOSFETS, with promising performance. The combination of silicide and fluoride heteroepitaxy on silicon may lead eventually to multiple level SOI device structures.

Citation Download Citation

Robin F. C. Farrow "Silicon-On-Insulator Technology By Heteroepitaxial Growth Of Fluorides", Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); https://doi.org/10.1117/12.961208

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