We present room-temperature AlGaAsSb/InGaAsSb heterojunction phototransistors (HPT) with a cutoff wavelength (50% of maximum quantum efficiency) of 2.4 μm and 2.15 μm. AlGaAsSb/InGaAsSb HPT structures were grown by molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD). This work is a continuation of a preceding project, which was carried out using liquid phase epitaxy (LPE) grown AlGaAsSb/InGaAsSb/GaSb heterostructures. Although the LPE-related work resulted in the fabrication of an HPT with excellent parameters, MBE and MOCVD - compared to LPE - provides better control over doping levels, composition and width of the AlGaAsSb and InGaAsSb layers, compositional and doping profiles, especially with regard to abrupt heterojunctions. HPT with different diameter of photosensitive area (75, 200, 300 and 1000 μm) were fabricated and characterized. In particular, I-V characteristics, spectral response and noise, as well as detectivity and noise-equivalent-power were determined in a broad range of temperatures and bias voltages. Advantages of HPT integration with diffractive optical elements (DOE) were demonstrated.