9 June 2006 FAST photon switches on semiconductor nanostructures
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Proceedings Volume 6251, Lasers for Measurements and Information Transfer 2005; 625112 (2006) https://doi.org/10.1117/12.677734
Event: Lasers for Measurements and Information Transfer 2005, 2005, St. Petersburg, Russian Federation
Abstract
Photon switches of a new type, based on semiconductor nanostructures have been developed. It reveals universal pure optical switches. Application of these switches lies in a field of systems of optical processing of information, optical calculating devices, totally optical communication lines with optical addressing of informational signals etc. The switches display high switching frequency (up to 106 cycL/sec), large modulation amplitude, function under weak controlling optical signal with power densities I<1W/cm2. They might be realized on a basis of semiconductor nanostructures with electrooptical semiconductor crystals (CdTe, GaAs) via the standard technologies of microelectronics. The switches are realized on the component optoelectronic base of a new type, which allows to get the optical recording of information with a rate of about 106cycl/sec, what is 3-4 orders of value of contemporary known registering media. The possibility of realization of such switches on a basis of cheap compensated crystals of CdTe and GaAs is discussed in the paper.
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P. G. Kasherininov, P. G. Kasherininov, A. V. Kichaev, A. V. Kichaev, A. N. Lodygin, A. N. Lodygin, A. A. Tomacob, A. A. Tomacob, V. K. Sokolov, V. K. Sokolov, "FAST photon switches on semiconductor nanostructures", Proc. SPIE 6251, Lasers for Measurements and Information Transfer 2005, 625112 (9 June 2006); doi: 10.1117/12.677734; https://doi.org/10.1117/12.677734
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