9 June 2006 SiO2 on CNT: molecular dynamics simulation
Author Affiliations +
Proceedings Volume 6253, Ninth International Workshop on Nondestructive Testing and Computer Simulations; 625306 (2006) https://doi.org/10.1117/12.676302
Event: Ninth International Workshop on Nondestructive Testing and Computer Simulations, 2005, St. Petersburg, Russian Federation
Abstract
Carbon nanotubes are the basic element of modern nanoelectronic devices. One of the most promising their applications is a carbon nanotube based conducting channel in field-effect transistor with SiO2 dielectric deposited on the nanotube. Simulation of SiOx on CNT technology and some properties of that system were studied by means of molecular dynamics method. MM+ interatomic potential was used for calculations.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vyacheslav V. Barkaline, Vladislav V. Nelayev, Alexander S. Chashinski, "SiO2 on CNT: molecular dynamics simulation", Proc. SPIE 6253, Ninth International Workshop on Nondestructive Testing and Computer Simulations, 625306 (9 June 2006); doi: 10.1117/12.676302; https://doi.org/10.1117/12.676302
PROCEEDINGS
8 PAGES


SHARE
Back to Top