14 June 2006 Temperature genesis of an exciton absorption band in 2H- and 4H-politypes of PBI2
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Proceedings Volume 6254, Seventh International Conference on Correlation Optics; 62541B (2006) https://doi.org/10.1117/12.679946
Event: Seventh International Conference on Correlation Optics, 2005, Chernivsti, Ukraine
Abstract
The reasons of experimentally observed in 2H- and 4H-politypes of layer semiconductor PbI2 anomalous temperature-depending behavior of the exciton absorption bands in the low-temperature region have been investigated. The influence of the weak exciton-phonon interaction of quadratic energy dispersion of Vanier- Mott's exciton with the nondisperse optical, and both the low-energy optical and acoustic bending-wave type phonons there has been considered. It was shown that the low-temperature dynamics of an exciton absorption peak shift in 2H-politype of the lead iodide crystals is related with the concurrent influence of two exciton energy relaxation mechanisms - on both the bending waves and the lattice optical phonons, but in the case of 4H-politype - the influence of the low-energy optical phonons must be taken into account.
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N. K. Kramar, V. M. Kramar, Yu. M. Kachmarskii, "Temperature genesis of an exciton absorption band in 2H- and 4H-politypes of PBI2", Proc. SPIE 6254, Seventh International Conference on Correlation Optics, 62541B (14 June 2006); doi: 10.1117/12.679946; https://doi.org/10.1117/12.679946
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