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14 June 2006 The peculiarities of optical bistability realization in the exciton absorption region of layer semiconductors
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Proceedings Volume 6254, Seventh International Conference on Correlation Optics; 62541D (2006) https://doi.org/10.1117/12.679949
Event: Seventh International Conference on Correlation Optics, 2005, Chernivsti, Ukraine
Abstract
The influence of the exciton and phonon spectra of layer semiconductors on the conditions of optical bistability (OB) realization in the exciton absorption region is investigated by means of the Green function method. Using the 2H-polytype PbI2 as an example, it has been found that an effective exciton scattering by an oscillation of the bending wave (BW) type leads to the short wave shift of the OB realization region, the decrease of its size, the widening of the OB observing temperature region and to the shift of the hysteresis loop in the direction of greater intensities, the decrease of its height and width. The possibility of observing the polarizable OB, connected with the direction of spreading and the insident light polarization dependence ofthe layer crystal exciton spectra is substantiated in this paper.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Olexander V. Derevyanchuk, Claudia Yu. Zenkova, Valeriy M. Kramar, and Natallya K. Kramary "The peculiarities of optical bistability realization in the exciton absorption region of layer semiconductors", Proc. SPIE 6254, Seventh International Conference on Correlation Optics, 62541D (14 June 2006); https://doi.org/10.1117/12.679949
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