19 May 2006 Optical mixing in GaAs/InGaAs/InGaP butt-joint diode lasers: new scheme for the sum- and difference-frequency generation
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Abstract
Butt-joint diode lasers for the efficient nonlinear optical mixing in semiconductors are suggested and successfully implemented. First experimental demonstration of the sum-frequency and second-harmonic continuous-wave room-temperature generation in the InGaAs/GaAs/InGaP butt-joint diode lasers in the edge-emitting geometry is reported. Specific features of the butt-joint device, where two butt-joined diode lasers are optically coupled but injection pumped separately, are investigated and the prospects of the difference-frequency (far-infrared) generation are outlined.
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Sergey M. Nekorkin, Boris N. Zvonkov, Anton A. Biryukov, Aleksey A. Belyanin, Vladimir Ya. Aleshkin, Sergey V. Morozov, Vitaly V. Kocharovsky, Vladimir V. Kocharovsky, Marlan O. Scully, "Optical mixing in GaAs/InGaAs/InGaP butt-joint diode lasers: new scheme for the sum- and difference-frequency generation", Proc. SPIE 6257, ICONO 2005: Nonlinear Laser Spectroscopy, High Precision Measurements, and Laser Biomedicine and Chemistry, 62570J (19 May 2006); doi: 10.1117/12.678364; https://doi.org/10.1117/12.678364
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