14 June 2006 Autler-Townes splitting of excitons and biexcitons in semiconductors
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Proceedings Volume 6259, ICONO 2005: Nonlinear Optical Phenomena; 625909 (2006) https://doi.org/10.1117/12.677871
Event: ICONO 2005, 2005, St. Petersburg, Russian Federation
The behavior of the semiconductor dielectric susceptibility under the stationary action of a strong laser pulse in the range of M-band of luminescence and the test pulse in the exciton range of spectrum is investigated. The well pronounced Autler-Townes effect occurs at the exciton range. The position of the absorption peaks is determined by the amplitude and frequency of pump pulse.
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P. I. Khadzhi, L. Yu. Nadkin, D. V. Tkachenko, "Autler-Townes splitting of excitons and biexcitons in semiconductors", Proc. SPIE 6259, ICONO 2005: Nonlinear Optical Phenomena, 625909 (14 June 2006); doi: 10.1117/12.677871; https://doi.org/10.1117/12.677871

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