10 June 2006 Ultra shallow p+-n junctions in Si produced by plasma immersion ion implantation
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Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 626003 (2006) https://doi.org/10.1117/12.676912
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation
We present the results of experiments on PIII application to form the ultra shallow highly doped junctions for ULSI CMOS technology. Experiments were carried out with plasma immersion implanter designed for 150 mm wafers. Two-step process includes the Si-surface pre-amorphizing implantation by Ar+ (Xe+) ions from plasma and subsequent boron doping of n-Si wafer from low pressure plasma of BF3 (ICP HDP-source) by flux of accelerated molecular ions without mass separation. Accelerating voltage of bias pulses is varied in the range of 0.7 - 4.5 kV. Implanted boron was activate by both RTA and it combination with furnace annealing technique. Under experimental conditions, the p-n junctions with depth of 40-70 nm were formed with sheet resistance of p+ layers in the range of 100 - 300 Ohm/square.
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K. Rudenko, K. Rudenko, S. Averkin, S. Averkin, V. Lukichev, V. Lukichev, A. Orlikovsky, A. Orlikovsky, A. Pustovit, A. Pustovit, A. Vyatkin, A. Vyatkin, "Ultra shallow p+-n junctions in Si produced by plasma immersion ion implantation", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 626003 (10 June 2006); doi: 10.1117/12.676912; https://doi.org/10.1117/12.676912

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