10 June 2006 Formation of conductive structures in insulate layers by selective removal of atoms technique
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Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 626005 (2006) https://doi.org/10.1117/12.677147
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation
The structure and electric properties of initial oxides and metals (Bi, Ag, Cu, Ni, Co, Mo and W) produced by Selective Removal of oxygen Atoms technique (SRA) were studied. It was found a correspondence of electrical conductivity of SRA metals and pure sputtered metals films. At the same time, low resistance of some oxides, for instance CuO, will initiate big leakage currents inside the layer. Among the investigated materials special attention will be paid to SRA Bi, Mo and W because of the high values of contact resistance and puncture potential with initial oxides. It is shown the adaptability of Selective Removal of Atoms technique for formation of conductive insulated structures in layers for new micro and nano-electronic devices.
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B. Gurovich, B. Gurovich, K. Prikhodko, K. Prikhodko, A. Domantovsky, A. Domantovsky, E. Kuleshova, E. Kuleshova, E. Olshansky, E. Olshansky, K. Maslakov, K. Maslakov, Y. Lunin, Y. Lunin, "Formation of conductive structures in insulate layers by selective removal of atoms technique", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 626005 (10 June 2006); doi: 10.1117/12.677147; https://doi.org/10.1117/12.677147

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