The structure and electric properties of initial oxides and metals (Bi, Ag, Cu, Ni, Co, Mo and W) produced by Selective Removal of oxygen Atoms technique (SRA) were studied. It was found a correspondence of electrical conductivity of SRA metals and pure sputtered metals films. At the same time, low resistance of some oxides, for instance CuO, will initiate big leakage currents inside the layer. Among the investigated materials special attention will be paid to SRA Bi, Mo and W because of the high values of contact resistance and puncture potential with initial oxides. It is shown the adaptability of Selective Removal of Atoms technique for formation of conductive insulated structures in layers for new micro and nano-electronic devices.