Dense arrays of Ge nanoclusters induced by low-energy ion-beam assisted deposition on Si02 films

A. V. Dvurechenskii; P. L. Novikov; Y. Khang; Zh. V. Smagina; V. A. Armbrister; V. G. Kesler; A. K. Gutakovskii

doi:10.1117/12.676916

10 June 2006 Dense arrays of Ge nanoclusters induced by low-energy ion-beam assisted deposition on Si0₂ films

A. V. Dvurechenskii, P. L. Novikov, Y. Khang, Zh. V. Smagina, V. A. Armbrister, V. G. Kesler, A. K. Gutakovskii

Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 626006 (2006) https://doi.org/10.1117/12.676916
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation

Abstract

Ge islands less then 10 nm in base diameter and with a number density of about 8×10¹¹ cm² were created on Si0₂ films by low-energy ion-beam assisted deposition in high vacuum. The structures obtained were analyzed by Electron Spectroscopy for Chemical Analysis, Atomic Force Microscopy and High Resolution Electron Microscopy. It was found that due to desorption at 300-375 °C less than 50% of Ge deposited remains at the surface. Only pulse regime of ion-beam action results in formation of nanoclusters. It is suggested that the simultaneous nucleation of Ge islands at pulse ion-beam action is the main reason of high homogeneity of size distribution of Ge nanoislands.

Citation Download Citation

A. V. Dvurechenskii, P. L. Novikov, Y. Khang, Zh. V. Smagina, V. A. Armbrister, V. G. Kesler, and A. K. Gutakovskii "Dense arrays of Ge nanoclusters induced by low-energy ion-beam assisted deposition on Si0₂ films", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 626006 (10 June 2006); https://doi.org/10.1117/12.676916

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