Translator Disclaimer
10 June 2006 Diffusion and phase formation in ternary silicate systems framed by an ion bombardment
Author Affiliations +
Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 626007 (2006)
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation
New technology of obtaining of SOT-structures by ionic synthesis of buried silica glass layers has been proposed. This technology is based on physical processes of formation of a new phase that appears in ion-synthesized Si-B-O and Si-P-0 systems at heat treatment. It has been shown that synthesized layers can be formed at significantly moderated annealing conditions than in the case of SIMOX-process. The structures have been studied by secondary ion-mass spectrometry (SIMS), Auger-electron spectroscopy and X-ray photoelectron spectroscopy (XPS). The study of electrical characteristics of the structures with buried silica glass layers includes the current-voltage and capacity-voltage measurements.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergey A. Krivelevich, Eduard Yu. Buchin, Yuri I. Denisenko, and Roman V. Selyukov "Diffusion and phase formation in ternary silicate systems framed by an ion bombardment", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 626007 (10 June 2006);

Back to Top