10 June 2006 Diffusion and phase formation in ternary silicate systems framed by an ion bombardment
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Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 626007 (2006) https://doi.org/10.1117/12.677013
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation
Abstract
New technology of obtaining of SOT-structures by ionic synthesis of buried silica glass layers has been proposed. This technology is based on physical processes of formation of a new phase that appears in ion-synthesized Si-B-O and Si-P-0 systems at heat treatment. It has been shown that synthesized layers can be formed at significantly moderated annealing conditions than in the case of SIMOX-process. The structures have been studied by secondary ion-mass spectrometry (SIMS), Auger-electron spectroscopy and X-ray photoelectron spectroscopy (XPS). The study of electrical characteristics of the structures with buried silica glass layers includes the current-voltage and capacity-voltage measurements.
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Sergey A. Krivelevich, Sergey A. Krivelevich, Eduard Yu. Buchin, Eduard Yu. Buchin, Yuri I. Denisenko, Yuri I. Denisenko, Roman V. Selyukov, Roman V. Selyukov, } "Diffusion and phase formation in ternary silicate systems framed by an ion bombardment", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 626007 (10 June 2006); doi: 10.1117/12.677013; https://doi.org/10.1117/12.677013
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