10 June 2006 Radiation-induced structure modification in monocrystalline silicon under high-energy C6+ irradiation
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Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 626008 (2006) https://doi.org/10.1117/12.677148
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation
Abstract
This paper concerns surface morphology and structural modification in silicon after 1.2 GeV C6+ irradiation. A number of experimental techniques was used, including atomic force microscopy, x-ray photoelectron spectroscopy and x-ray diffraction studies. The formation of nanometer-sized hillocks on the surface was revealed. In the bulk of parallel-irradiated specimens amorphous regions formation was discovered.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. S. Balashov, T. S. Balashov, A. A. Golubev, A. A. Golubev, M. A. Kozodaev, M. A. Kozodaev, S. V. Rogozhkin, S. V. Rogozhkin, A. D. Fertman, A. D. Fertman, V. I. Turtikov, V. I. Turtikov, A. G. Zaluzhnyi, A. G. Zaluzhnyi, } "Radiation-induced structure modification in monocrystalline silicon under high-energy C6+ irradiation", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 626008 (10 June 2006); doi: 10.1117/12.677148; https://doi.org/10.1117/12.677148
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