10 June 2006 Morphology and structure of PZT films
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Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 62600F (2006) https://doi.org/10.1117/12.677064
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation
One of the important problem of transition from micro- to nanomeasure elements in modem electronics is the creation of dielectric layers with high permittivity and less than 200 nm thickness. The opportunities of using titanium, hafhium, aluminium, silicon nitride, barium titanium, lead and strontium oxide are considered. One of the most promising directions is the usage of solid solutions of Ti-Zr films.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. V. Silibin, M. V. Silibin, V. M. Roschin, V. M. Roschin, V. B. Yakovlev, V. B. Yakovlev, M. S. Lovygina, M. S. Lovygina, "Morphology and structure of PZT films", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62600F (10 June 2006); doi: 10.1117/12.677064; https://doi.org/10.1117/12.677064

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