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10 June 2006 Degradation of thin copper conductors because of low temperature melting
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Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 62600H (2006) https://doi.org/10.1117/12.677086
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation
Abstract
It is shown that copper thin film conductors (10-100 nm thickness) have not the defined temperature of melting. The melting of 20 nm copper thin film starts at 610 °C after 5 mm and, at the same time, at 470 °C after 3 h 40 mm. The melting of 100 nm copper thin film starts at 740 °C after 7 mm and at 640 °C after 2 h 25 mm. The kinetics of this phenomenon has been studied. The stages of process have been shown. The activation energies of thin film melting have been estimated. It is demonstrated that the activation energy of process is decreased with the copper film thickness reduction. The character of activation energy changes has been explained with point of view of the hydrodynamics.
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D. G. Gromov, S. A. Gavrilov, E. N. Redichev, A. I. Mochalov, and R. M. Ammosov "Degradation of thin copper conductors because of low temperature melting", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62600H (10 June 2006); doi: 10.1117/12.677086; https://doi.org/10.1117/12.677086
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