10 June 2006 Electronic transport through silicon nanocrystals embedded in SiO2 matrix
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Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 62600L (2006) https://doi.org/10.1117/12.677164
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation
Abstract
The presented work is devoted to investigation of electrical properties of metal-oxide-semiconductor structures containing nanocrystals in silicon dioxide. Nanocrystals were fabricated in the middle of SiO2 layer with use of ion implantation and following thermal treatments at a temperature of ~1000°C. Capacity-voltage (C-V) and current-voltage (I-V) characteristics were measured at room and nitrogen temperatures at various frequencies from 1kHz up to 145kHz. I-V characteristics of MOS-structures with 75nm thick SiO2 layer demonstrated repeatable steps. Position of steps qualitatively corresponds to theoretical one, which were calculated using electron state energies for nanocrystals with size 5 nm. Steps due to Coulomb blockade effect on spin degenerated levels in nanocrystals are resolved in experiment. CV- characteristics displayed sharp frequency dependent peak possibly corresponded to approximately mono-energetic states, which provides transport of electrons through SiOx.
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M. D. Efremov, M. D. Efremov, S. A. Arzhannikova, S. A. Arzhannikova, G. N. Kamaev, G. N. Kamaev, G. A. Kachurin, G. A. Kachurin, A. V. Kretinin, A. V. Kretinin, V. V. Malutina-Bronskaya, V. V. Malutina-Bronskaya, D. V. Marin, D. V. Marin, V. A. Volodin, V. A. Volodin, S. G. Cherkova, S. G. Cherkova, "Electronic transport through silicon nanocrystals embedded in SiO2 matrix", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62600L (10 June 2006); doi: 10.1117/12.677164; https://doi.org/10.1117/12.677164
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