Paper
10 June 2006 Peculiarities of the electrical characteristics of the pseudomorphous SiGe/Si MODFET structures with a corrugated surface
L. K. Orlov, Zs. Horvath, A. V. Potapov, N. L. Ivina, B. Pecz, L. Toth, L. Dobos, V. B. Shevtsov, A. S. Lonchakov
Author Affiliations +
Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 62600M (2006) https://doi.org/10.1117/12.677196
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation
Abstract
In the present activity the properties of the Si/SiGe MODFET structure with a Si electronic transport channel in SiGe layer is studied. Larger attention is given to the interfaces channel and their influence on the electrical characteristics of a structure. Is shown, that in actual structures the kinetics of molecules disintegration not only determine a structure profile near interfaces, but also can promote the origin of nanostructural compositions in these areas. It can exhibit in a formation of arrays of quantum dots from one of component of solid solution on the layer boundary, resulting to a lot of effects as in longitudinal and transversal conductivity of the epitaxial structure.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. K. Orlov, Zs. Horvath, A. V. Potapov, N. L. Ivina, B. Pecz, L. Toth, L. Dobos, V. B. Shevtsov, and A. S. Lonchakov "Peculiarities of the electrical characteristics of the pseudomorphous SiGe/Si MODFET structures with a corrugated surface", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62600M (10 June 2006); https://doi.org/10.1117/12.677196
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KEYWORDS
Silicon

Germanium

Interfaces

Electron transport

Chemical species

Field effect transistors

Crystals

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