10 June 2006 Peculiarities of the electrical characteristics of the pseudomorphous SiGe/Si MODFET structures with a corrugated surface
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Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 62600M (2006) https://doi.org/10.1117/12.677196
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation
Abstract
In the present activity the properties of the Si/SiGe MODFET structure with a Si electronic transport channel in SiGe layer is studied. Larger attention is given to the interfaces channel and their influence on the electrical characteristics of a structure. Is shown, that in actual structures the kinetics of molecules disintegration not only determine a structure profile near interfaces, but also can promote the origin of nanostructural compositions in these areas. It can exhibit in a formation of arrays of quantum dots from one of component of solid solution on the layer boundary, resulting to a lot of effects as in longitudinal and transversal conductivity of the epitaxial structure.
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L. K. Orlov, L. K. Orlov, Zs. Horvath, Zs. Horvath, A. V. Potapov, A. V. Potapov, N. L. Ivina, N. L. Ivina, B. Pecz, B. Pecz, L. Toth, L. Toth, L. Dobos, L. Dobos, V. B. Shevtsov, V. B. Shevtsov, A. S. Lonchakov, A. S. Lonchakov, } "Peculiarities of the electrical characteristics of the pseudomorphous SiGe/Si MODFET structures with a corrugated surface", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62600M (10 June 2006); doi: 10.1117/12.677196; https://doi.org/10.1117/12.677196
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