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10 June 2006 Surface scattering in SOI field-effect transistor
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Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 62600O (2006) https://doi.org/10.1117/12.677221
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation
Abstract
The influence of surface roughness scattering on channel conductivity of ultrathin body MOSFET in a quantum mechanical approach is considered. Analyzing a counterplay between Coulomb and surface scattering we show that a transition from dominating Coulomb scattering towards dominating surface scattering occurs when the film thickness is reduced to few nanometers. Evidently, the "critical" film thickness depends upon roughness characteristics and surface charged defects density. We have also examined the ripple-wise roughness which gives rise 4th power law of dependence of mobility on film thickness. In spite of a smaller power compared to that for smooth roughness the ripple-wise roughness could dominate just on Si/Si02 interface due to high discrepancy in lattice constants of contacting materials.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. D. Ananiev, V. V. V'yurkov, and V. F. Lukichev "Surface scattering in SOI field-effect transistor", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62600O (10 June 2006); https://doi.org/10.1117/12.677221
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