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10 June 2006 Structural and electrophysical properties of pseudomorphic GaAs/InGaAs/GaAs quantum wells: effect of thin central AlAs barrier
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Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 62600P (2006) https://doi.org/10.1117/12.681733
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation
Abstract
Electron transport, optical and structure properties of the shallow pseudomorphic quantum wells (QW) GaAs/InGaAs/GaAs are studied by electrophysical, photoluminescence and X-ray double-axes diffractometry methods. It is revealed that insertion of a thin AlAs potential barrier in the center of QW leads to efficient changes of subband structure and mobility. In the case of shallow and narrow quantum wells the observed decrease of mobility is due to appearance of the different scattering mechanism. X-ray diffractometry study is undertaken in order to distinguish whether it is interface roughness scattering from the introduced barrier or another scattering mechanism.
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Ivan S. Vasil'evskii, Vladimir A. Kulbachinskii, Andrei A. Lomov, Rafik M. Imamov, Denis Yu. Prokhorov, Mihael A. Chuev, Galib B. Galiev, and Stanislav S. Shirokov "Structural and electrophysical properties of pseudomorphic GaAs/InGaAs/GaAs quantum wells: effect of thin central AlAs barrier", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62600P (10 June 2006); https://doi.org/10.1117/12.681733
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