10 June 2006 Influence of thermodiffusion parameters on the concentration profiles
Author Affiliations +
Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 62600R (2006) https://doi.org/10.1117/12.681764
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation
The research of influence of the thermodiffusion parameters -temperature gradient ∇T and heat of transport Q* on concentration profiles is carried out for diffusion from an instantaneous plane source and an extended source of infinite extent. The estimations of heats of transport of the P and B in silicon are made at nonisothermal annealing. The obtained results correspond to theoretical estimations and give meanings ofheat oftransport ~103 eV.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Valery I. Rudakov, Vladimir V. Ovcharov, "Influence of thermodiffusion parameters on the concentration profiles", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62600R (10 June 2006); doi: 10.1117/12.681764; https://doi.org/10.1117/12.681764

Back to Top