10 June 2006 Influence of thermodiffusion parameters on the concentration profiles
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Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 62600R (2006) https://doi.org/10.1117/12.681764
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation
Abstract
The research of influence of the thermodiffusion parameters -temperature gradient ∇T and heat of transport Q* on concentration profiles is carried out for diffusion from an instantaneous plane source and an extended source of infinite extent. The estimations of heats of transport of the P and B in silicon are made at nonisothermal annealing. The obtained results correspond to theoretical estimations and give meanings ofheat oftransport ~103 eV.
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Valery I. Rudakov, Valery I. Rudakov, Vladimir V. Ovcharov, Vladimir V. Ovcharov, } "Influence of thermodiffusion parameters on the concentration profiles", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62600R (10 June 2006); doi: 10.1117/12.681764; https://doi.org/10.1117/12.681764
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