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10 June 2006 Combined electromagnetic mirror as the probable breakthrough tool in an ion nanotechnology
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Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 626012 (2006)
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation
It is offered the using of new, simpler and more stable electron - optical element - the combined electromagnetic mirror as the corrector of the axial chromatic aberration in ion optical systems. Such element, together with the system of separation of beams, forms the corrector. The use of such corrector allows powerfully lowering the coefficient of chromatic aberration of ion objectives. The maximum of the relative magnitude of the coefficient lowering is equal to the inverse coefficient of stability of electrodes voltage in ion microscopes and currents stability in the magnetic lenses of electron microscopes (i.e. in 105 times). In FIB-systems it will allow to create sondes of sub-nanometer size and also it will allow to solve the problem of creation of single ions implanter for technology of a solid-state quantum computer. It's shown that resolution (or FWHM) of 2 nanometer may be achieved by reactive ion etching with the using of focused ion beam on the base of combined electromagnetic mirror as compensator of chromatic aberration of ion objective lenses. It will allow to create the templates for imprint and masks for proximity lithography with the size of half pith of 2 nm.
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Valery A. Zhukov and Anna V. Zavyalova "Combined electromagnetic mirror as the probable breakthrough tool in an ion nanotechnology", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 626012 (10 June 2006);

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