10 June 2006 Structural and nonlinear-optical studies of ultrathin Si/Si02 multiple quantum wells
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Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 626016 (2006) https://doi.org/10.1117/12.683402
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation
Optical second harmonic generation (SHG) in amorphous Si/SiO2 multiple quantum wells (MQW) is studied by means of SHG spectroscopy, SHG interferometric spectroscopy and X-ray double-axes reflectometry of the MQW samples with the Si quantum well thickness d ranging from 1.00 to 0.25 nm. The electron density profiles obtained from X-ray reflectometry data confirm multilayer structure presence and refine growth data on d values. The observed modification of the SHG spectra upon decreasing d is interpreted using combination of the resonant two-subband approximation for the nonlocal optical response of each quantum well with the generalized transfer-matrix formalism for the description of light propagation across the whole MQW structure. Agreement with the experiment shows that the description of the quadratic optical response of the MQW structure within the model of a nonlocal piecewise-continuous medium remains valid on the sub-nanometer scale.
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Andrei A. Lomov, Andrei A. Lomov, Arseniy G. Sutyrin, Arseniy G. Sutyrin, Denis Yu. Prokhorov, Denis Yu. Prokhorov, Tatyana V. Dolgova, Tatyana V. Dolgova, Andrei A. Fedyanin, Andrei A. Fedyanin, Oleg A. Aktsipetrov, Oleg A. Aktsipetrov, } "Structural and nonlinear-optical studies of ultrathin Si/Si02 multiple quantum wells", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 626016 (10 June 2006); doi: 10.1117/12.683402; https://doi.org/10.1117/12.683402

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