10 June 2006 Non-volatile electrically reprogrammable memory on self-forming conducting nanostructures
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Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 62601C (2006) https://doi.org/10.1117/12.683486
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation
Physical bases of the electroforming phenomenon are described in view of conceptions developed about it during last years as the process of self-formation of a nanometer insulating gap in a conductive medium which is formed on a dielectric surface in some general enough conditions. The structure and the characteristics of a cell of non-volatile electrically reprogrammable memory made by methods of silicon technology and based on the phenomenon of electroforming in open Si-SiO2-W "sandwich"-structures with thickness of silicon dioxide about 20 nm is given. The information in such memory is coded by the sizes (and resistance) of a self-forming conducting nanostructure, therefore already from physical principles it should possess the high thermal and radiation resistance that is confirmed experimentally. On the made samples of a small capacity matrix (3×3 cells) all the functions of non-volatile electrically reprogrammable memory have been shown.
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Victor M. Mordvintsev, Sergey E. Kudrjavtsev, Valeriy L. Levin, "Non-volatile electrically reprogrammable memory on self-forming conducting nanostructures", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62601C (10 June 2006); doi: 10.1117/12.683486; https://doi.org/10.1117/12.683486

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