10 June 2006 Non-volatile electrically reprogrammable memory on self-forming conducting nanostructures
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Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 62601C (2006); doi: 10.1117/12.683486
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation
Abstract
Physical bases of the electroforming phenomenon are described in view of conceptions developed about it during last years as the process of self-formation of a nanometer insulating gap in a conductive medium which is formed on a dielectric surface in some general enough conditions. The structure and the characteristics of a cell of non-volatile electrically reprogrammable memory made by methods of silicon technology and based on the phenomenon of electroforming in open Si-SiO2-W "sandwich"-structures with thickness of silicon dioxide about 20 nm is given. The information in such memory is coded by the sizes (and resistance) of a self-forming conducting nanostructure, therefore already from physical principles it should possess the high thermal and radiation resistance that is confirmed experimentally. On the made samples of a small capacity matrix (3×3 cells) all the functions of non-volatile electrically reprogrammable memory have been shown.
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Victor M. Mordvintsev, Sergey E. Kudrjavtsev, Valeriy L. Levin, "Non-volatile electrically reprogrammable memory on self-forming conducting nanostructures", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62601C (10 June 2006); doi: 10.1117/12.683486; https://doi.org/10.1117/12.683486
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KEYWORDS
Dielectrics

Silicon

Electrodes

Particles

Metals

Switching

Resistance

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