10 June 2006 Calculation of secondary charge carrier current in submicron channel MOSFETs at stress regimes of operation
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Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 62601E (2006) https://doi.org/10.1117/12.683488
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation
Abstract
The Monte Carlo model of the impact ionization in deep submicron MOSFETs is worked out. This model allows the influence of the secondary charge carrier current on the drain current to be evaluated. The developed model is built on the basis of the reduction scheme. Moreover, the model takes into account all the major features of electron transport in deep submicron MOSFETs, the dominant scattering mechanisms, the quantization of electron spectrum as well as the modeling of constructive parameters and basic drain breakdown mechanisms.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir Borzdov, Vladimir Borzdov, Fadei Komarov, Fadei Komarov, Oleg Zhevnyak, Oleg Zhevnyak, Vadim Galenchik, Vadim Galenchik, Dmitry Pozdnyakov, Dmitry Pozdnyakov, Andrei Borzdov, Andrei Borzdov, } "Calculation of secondary charge carrier current in submicron channel MOSFETs at stress regimes of operation", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62601E (10 June 2006); doi: 10.1117/12.683488; https://doi.org/10.1117/12.683488
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