10 June 2006 Effective electrostatic discharge protection elements for CMOS circuits
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Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 62601F (2006) https://doi.org/10.1117/12.683489
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation
A new electric circuit layout and physical structure are proposed for an element of protection against electrostatic discharges. The new element features twice as small resistance to the electrostatic discharge current. The reduced resistance is obtained by using additional transistors implementing feedback. The use of the new electric circuit layout and of a new simulation technique that takes into account substrate transistors made it possible to reduce the element's area 1.5-fold and its electric capacity 1.6-fold.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. A. Gergel', V. A. Gergel', N. M. Gorshkova, N. M. Gorshkova, } "Effective electrostatic discharge protection elements for CMOS circuits", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62601F (10 June 2006); doi: 10.1117/12.683489; https://doi.org/10.1117/12.683489


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