10 June 2006 Combined method of copper electroplating deposition and low temperature melting for damascene technology
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Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 62601H (2006) https://doi.org/10.1117/12.683493
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation
Abstract
The combined method of trench filling by copper for damascene technology has been developed. The method is based on copper deposition by ordinary electroplating and following low temperature melting of copper layer. The thickness of wetting layer has been optimized. The importance of seed layer surface treatment is demonstrated. It is shown that the thermal annealing at 650oC allows to dispose of voids appearing at copper electrochemical deposition into trenches.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. N. Redichev, E. N. Redichev, D. G. Gromov, D. G. Gromov, S. A. Gavrilov, S. A. Gavrilov, A. I. Mochalov, A. I. Mochalov, R. M. Ammosov, R. M. Ammosov, } "Combined method of copper electroplating deposition and low temperature melting for damascene technology", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62601H (10 June 2006); doi: 10.1117/12.683493; https://doi.org/10.1117/12.683493
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