10 June 2006 Use of thermomigration in MEMS technology
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Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 62601L (2006) https://doi.org/10.1117/12.683500
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation
Abstract
The physical principles of thermomigration process and technical approaches utilizing this process at fabrication various kinds of silicon-based MEMS devices have been presented. The specific examples applied to silicon bulk micromachining, producing of p-n junction isolation and vertical through-wafer interconnects, and monolithic joining of silicon package has been considered. On the above-mentioned subjects, the review contains available information extracted from more than 30 scientific articles and patents.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eduard Yu. Buchin, Yuri I. Denisenko, "Use of thermomigration in MEMS technology", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62601L (10 June 2006); doi: 10.1117/12.683500; https://doi.org/10.1117/12.683500
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