10 June 2006 Improved modeling of the photoconductivity of amorphous semiconductors for the purposes of the microelectronics
Author Affiliations +
Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 62601T (2006) https://doi.org/10.1117/12.683563
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation
Abstract
Method of the modeling of the density of charged states in the band gap of amorphous semiconductor was developed. Modeling procedure including of the fitting of different experimental dependencies of the photoconductivity with using of the same DOS model was developed. These method and procedure were applied to the a-SiGe:H films fabricated by LF (55 kHz) PECVD. The densities of charged states in the band gap of amorphous semiconductor were estimated and redistribution processes were analyzed. It was shown that deterioration of the optoelectronic properties of a-SiGe:H alloys with the increase of the germanium content is connected with the increase of recombination centers due to the Nd+ charged localized states. The fraction of these states appreciably increases with the increase of germanium content in the alloy.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. A. Sherchenkov, A. A. Sherchenkov, A. B. Apalkov, A. B. Apalkov, } "Improved modeling of the photoconductivity of amorphous semiconductors for the purposes of the microelectronics", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62601T (10 June 2006); doi: 10.1117/12.683563; https://doi.org/10.1117/12.683563
PROCEEDINGS
8 PAGES


SHARE
Back to Top