10 June 2006 Numerical algorithms for modeling of diffusion of As implanted in Si at low energies and high fluences
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Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 62601U (2006) https://doi.org/10.1117/12.683564
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation
Abstract
The model of transient enhanced diffusion of ion-implanted As is formulated and the finite-difference method for numerical solution of the system of equations obtained is developed. The nonuniform distribution of point defects near the interface and a new description of arsenic clustering are simultaneously taking into account. Simulation of As diffusion during rapid thermal annealing gives a reasonable agreement with the experimental data.
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F. F. Komarov, O. I. Velichko, A. M. Mironov, V. A. Tsurko, and G. M. Zayats "Numerical algorithms for modeling of diffusion of As implanted in Si at low energies and high fluences", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62601U (10 June 2006); doi: 10.1117/12.683564; https://doi.org/10.1117/12.683564
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