7 June 2006 Simulation of fast laser-induced melting and solidification in Si and GaAs
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Proceedings Volume 6261, High-Power Laser Ablation VI; 62610G (2006) https://doi.org/10.1117/12.669469
Event: High-Power Laser Ablation 2006, 2006, Taos, NM, United States
Abstract
Crystal-liquid phase transitions induced in monocrystalline Si and GaAs surface layers by nanosecond ruby laser irradiation have been studied. The values of undercooling at crystallization stage were calculated on the basis of a nonequilibrium model of the phase transitions. The calculated values of undercooling are compared with experimental results obtained by a pyrometric method under irradiation of samples with (111) and (100) surface crystallography orientations. Calculated values of surface temperature at crystallization stage are in a reasonable agreement with experimental data. The revealed experimentally difference in melt undercooling at crystallization stage for (100) and (111) surface orientations is explained within the framework of the nonequilibrium model.
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Elena I. Gatskevich, Elena I. Gatskevich, Gennadii D. Ivlev, Gennadii D. Ivlev, Petr Přikryl, Petr Přikryl, } "Simulation of fast laser-induced melting and solidification in Si and GaAs", Proc. SPIE 6261, High-Power Laser Ablation VI, 62610G (7 June 2006); doi: 10.1117/12.669469; https://doi.org/10.1117/12.669469
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