Paper
15 June 2006 GaAs array fabrication
D. H. Lumb, M. Bavdaz, D. Martin, A. Owens, A. Peacock, S. Nenonen, H. Andersson
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Abstract
The fabrication of GaAs diode arrays for X-ray imaging spectroscopy applications is described. Special attention is paid to the processing of wafers and devices to allow integration with different readout Application Specific Integrated Circuits (ASICs) using flip-chip bump bonding techniques.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. H. Lumb, M. Bavdaz, D. Martin, A. Owens, A. Peacock, S. Nenonen, and H. Andersson "GaAs array fabrication", Proc. SPIE 6276, High Energy, Optical, and Infrared Detectors for Astronomy II, 627614 (15 June 2006); https://doi.org/10.1117/12.671509
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KEYWORDS
Gallium arsenide

Sensors

X-rays

Semiconducting wafers

Metals

Signal detection

Imaging spectroscopy

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