15 June 2006 Development of extended wavelength response InGaAs detectors for astronomical applications
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Abstract
We report the results of a program to mitigate defect induced (tunneling) dark current which arises from lattice mismatch between In0.82Ga0.18As 'extended wavelength' detector material and the InP substrate upon which it is grown. Our goal is to produce material suitable for ground-based broadband astronomical observation by achieving a dark current level in individual 25x25μm array pixels which is less than the atmospheric airglow and telescope thermal emission in the astronomical H (1.50-1.80 μm) and Ks (2.00-2.32 μm) bands. We have cryogenically tested multiple growths of candidate materials, packaged as both individual diodes and focal plane arrays, supplied by Sensors Unlimited, Inc. (SU). Results indicate dark current levels, in the current generation of array materials, surpassing the requirements for broadband imaging, and with the potential to be used for narrow band imaging and low-resolution spectroscopy.
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Matthew Nelson, Michael Bush, Michael Skrutskie, Srikrishna Kanneganti, Chan Park, Ori Fox, "Development of extended wavelength response InGaAs detectors for astronomical applications", Proc. SPIE 6276, High Energy, Optical, and Infrared Detectors for Astronomy II, 62761R (15 June 2006); doi: 10.1117/12.671976; https://doi.org/10.1117/12.671976
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KEYWORDS
Diodes

Indium gallium arsenide

Astronomy

Readout integrated circuits

Cryogenics

Quantum efficiency

Sensors

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