27 June 2006 Recent results of the fully depleted back-illuminated CCD developed by Hamamatsu
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Abstract
We have been developing fully-depleted CCDs fabricated on N-type silicon wafer in collaboration with HAMAMATSU Photonics K.K.We have made several wafer runs to optimize the basic characteristics of the devices such as the charge transfer efficiency (CTE), the full-well capacity and the amplifier gain, followed by the optimization of the backside treatment to improve quantum efficiency (QE) in blue wavelengths. The optimization process is successfully completed, and Hamamatsu recently started to deliver the 2k × 4k (15 μm pixel) four-side buttable devices for acceptance evaluation at the National Astronomical Observatory of Japan. Based on the measured QE in the X-ray, the depletion depth reaches 200 μm with CTE as good as >0.999995 for serial and parallel directions and with readout noise of < 5 e- for 130 kHz readout. The size of charge diffusion is estimated to be < 7.5 μm (one sigma) for pinhole image at wavelength of 450 nm. The device flatness is < 15-20 μm, and the dark current is a few e-/hour/pixel at -100°C and ~ 20 e-/hour/pixel at -80°C.
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Yukiko Kamata, Yukiko Kamata, Satoshi Miyazaki, Satoshi Miyazaki, Hidehiko Nakaya, Hidehiko Nakaya, Takeshi Go Tsuru, Takeshi Go Tsuru, Shin-ichiro Takagi, Shin-ichiro Takagi, Hiroshi Tsunemi, Hiroshi Tsunemi, Emi Miyata, Emi Miyata, Masaharu Muramatsu, Masaharu Muramatsu, Hisanori Suzuki, Hisanori Suzuki, Kazuhisa Miyaguchi, Kazuhisa Miyaguchi, } "Recent results of the fully depleted back-illuminated CCD developed by Hamamatsu", Proc. SPIE 6276, High Energy, Optical, and Infrared Detectors for Astronomy II, 62761U (27 June 2006); doi: 10.1117/12.672628; https://doi.org/10.1117/12.672628
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