Mathematical modeling dependences of intensity monochromatic cathodeluminescence from electron beam energy for two-layer semiconductor structure

M. G. Snopova; A. G. Khokhlov; N. N. Mikheev; M. A. Stepovich

doi:10.1117/12.693220

31 May 2006 Mathematical modeling dependences of intensity monochromatic cathodeluminescence from electron beam energy for two-layer semiconductor structure

M. G. Snopova, A. G. Khokhlov, N. N. Mikheev, M. A. Stepovich

Author Affiliations +

Proceedings Volume 6278, Seventh Seminar on Problems of Theoretical and Applied Electron and Ion Optics; 62780O (2006) https://doi.org/10.1117/12.693220
Event: Seventh Seminar on Problems of Theoretical and Applied Electron and Ion Optics, 2005, Moscow, Russian Federation

Abstract

New opportunities of modelling of dependence of intensity monochromatic cathodeluminescence from electron beam energy for two-layer semiconductor structure on the basis of GaAs are considered, diffusion of nonbasic carriers of a charge in which is described with use of model of independent sources.

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M. G. Snopova, A. G. Khokhlov, N. N. Mikheev, and M. A. Stepovich "Mathematical modeling dependences of intensity monochromatic cathodeluminescence from electron beam energy for two-layer semiconductor structure", Proc. SPIE 6278, Seventh Seminar on Problems of Theoretical and Applied Electron and Ion Optics, 62780O (31 May 2006); https://doi.org/10.1117/12.693220

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