31 May 2006 Mathematical modeling dependences of intensity monochromatic cathodeluminescence from electron beam energy for two-layer semiconductor structure
Author Affiliations +
Proceedings Volume 6278, Seventh Seminar on Problems of Theoretical and Applied Electron and Ion Optics; 62780O (2006) https://doi.org/10.1117/12.693220
Event: Seventh Seminar on Problems of Theoretical and Applied Electron and Ion Optics, 2005, Moscow, Russian Federation
Abstract
New opportunities of modelling of dependence of intensity monochromatic cathodeluminescence from electron beam energy for two-layer semiconductor structure on the basis of GaAs are considered, diffusion of nonbasic carriers of a charge in which is described with use of model of independent sources.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. G. Snopova, A. G. Khokhlov, N. N. Mikheev, M. A. Stepovich, "Mathematical modeling dependences of intensity monochromatic cathodeluminescence from electron beam energy for two-layer semiconductor structure", Proc. SPIE 6278, Seventh Seminar on Problems of Theoretical and Applied Electron and Ion Optics, 62780O (31 May 2006); doi: 10.1117/12.693220; https://doi.org/10.1117/12.693220
PROCEEDINGS
6 PAGES


SHARE
Back to Top