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29 January 2007 Effects of annealing on the photoluminescence of terbium-doped zinc oxide nanocrystalline
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Proceedings Volume 6279, 27th International Congress on High-Speed Photography and Photonics; 62796Z (2007) https://doi.org/10.1117/12.725829
Event: 27th International congress on High-Speed Photography and Photonics, 2006, Xi'an, China
Abstract
Terbium-doped zinc oxide nanocrystalline are successfully prepared by Sol-Gel process at various annealing temperature from 400°C to 800°C. Photoluminescence spectrum (PL), Photoluminescence spectrum excitation(PLE) and X-ray diffraction pattern(XRD) of nanocrystalline ZnO:Tb3+ with excitation wavelength 368nm are measured at room temperature. XRD pattern indicates that nanocrystalline ZnO:Tb3+ has a hexagonal wurtzite structure and polycrystalline. The mean grain size of nanocrystalline ZnO:Tb3+ was 8nm~12nm calculated by Debye-Scherrer formula. Emission from 5D47F6 (485nm), 5D47F5 (544nm), 5D47F4 (584nm) and 5D47F3 (620nm) of Tb3+ ions, and wide visible band of ZnO were observed. Relationship between Photoluminescence intensity of the peaks of nanocrystalline ZnO:Tb3+ and annealing temperature were given, it was found that the optimal dopant concentration and annealing temperature was 4at% and 600°C. The luminescence process of Tb3+-doped zinc oxide nanocrystalline has investigated by using PL, PLE and XRD. Photoluminescence mechanism suggests that there is energy transfer between ZnO nanocrystalline hosts and the doped Tb3+ centers.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guo-li Song and You-Tong Yang "Effects of annealing on the photoluminescence of terbium-doped zinc oxide nanocrystalline", Proc. SPIE 6279, 27th International Congress on High-Speed Photography and Photonics, 62796Z (29 January 2007); https://doi.org/10.1117/12.725829
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