The concept of LEEPL is based on the discovery that there is a narrow energy space around 2KV of e-beam
proximity lithography where a potential solution for NGL exists. 
LEEPL Corporation and LEEPL Technology Consortium consisting of 32 companies have been formed in 2000 and
2001 respectively for the purpose of developing LEEPL technology. The development has been carried out by 1)
building α-tool, 2×β-tools, a pre-production model (LEEPL-3000) and 2) by building the infrastructure supporting
LEEPL technology such as development and supply of LEEPL masks, resist materials, mask inspection and repair tools.
Here LEEPL's overall status and future prospect will be presented for the first time on the base of the past 5
years' intensive effort.
The content of the presentation include LEEPL Development Overview, Exposure and Alignment Systems,
Performance of Resolution, Resist Process, Throughput, and Cost of Ownership Comparison, and LEEPL Mask and
Related Technologies. In conclusion the potential of LEEPL as an alternative solution for future semiconductor
lithography beyond 45 nm node device application will be discussed.