21 June 2006 The magic of 4X mask reduction
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Proceedings Volume 6281, 22nd European Mask and Lithography Conference; 62810R (2006) https://doi.org/10.1117/12.692707
Event: 22nd European Mask and Lithography Conference, 2006, Dresden, Germany
Although changing the mask reduction factor from 4X to a larger value offers several technical advantages, previous attempts to enact this change have not identified enough clear technical advantages to overcome the impact to productivity. Improvements in mask manufacturing, mask polarization effects, and optics cost have not been thought to be sufficient reason to accept a reduced throughput and field size. This paper summarizes the latest workshop and discussion revisiting the mask reduction factor for 32nm half-pitch lithography with hyper-numerical aperture (NA) optical or extreme ultraviolet lithography (EUVL). The workshop consensus was strongly in favor of maintaining the current magnification ratio and field size as long as mask costs can be contained.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael Lercel, Michael Lercel, } "The magic of 4X mask reduction", Proc. SPIE 6281, 22nd European Mask and Lithography Conference, 62810R (21 June 2006); doi: 10.1117/12.692707; https://doi.org/10.1117/12.692707

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